Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
Identifieur interne : 000729 ( Russie/Analysis ); précédent : 000728; suivant : 000730Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
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Abstract
The spectral position of the peak of photoluminescence from an InGaAsN quantum well has been studied as a function of the chemical composition of the quaternary compound. An empirical equation is proposed which describes with good precision the experimentally observed dependences and allows prediction of the composition necessary to obtain a required wavelength. © 2002 MAIK Nauka / Interperiodica .
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